Power Transistors

1

Publication date: July 2004

SJD00321AED

2SC6012

Silicon NPN triple diffusion mesa type

For horizontal deflection output

■ Features

• High breakdown voltage, and high reliability through the use of a

glass passivation layer

• High-speed switching

• Wide safe oeration area

■ Absolute Maximum Ratings T

C

= 25°C

■ Electrical Characteristics T

C

= 25°C ± 3°C

Unit: mm

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: Pulse measurement

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

V

= 7.0 A

−2V

Collector-base cutoff current (Emitter open)

µA

mA

= 5 V, I

C

= 7.0 A

7

12



3.0

V

1.5

V

Transition frequency

= 10 V, I

C

= 0.5 A, f = 0.5 MHz

2.1

MHz

Storage time

5.0

µs

Fall time

0.5

µs

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

1 700

V

Collector-emitter voltage (E-B short)

1 700

V

Emitter-base voltage (Collector open)

7V

Base current

3A

Collector current

15

A

24

A

Collector power dissipation

60

W

= 25°C3

Junction temperature

150

°C

Storage temperature

−55 to +150

°C

(4.0)

5˚

5˚

5˚

5˚

5˚

1

5˚

23

1: Base

2: Collector

3: Emitter

EIAJ: SC-94

TOP-3E-A1 Package

Note) *: Non-repetitive peak collector current

Internal Connection

B

C

E