BZX384 datasheet(4/11 Pages) PHILIPS

4 / 11 page

2004 Mar 22

Philips Semiconductors

Product speciﬁcation

Voltage regulator diodes

BZX384 series

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Note

1. Refer to SOD323 standard mounting conditions.

CHARACTERISTICS

Total BZX384-B and C series

Tj =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

continuous forward current

−

250

IZSM

non-repetitive peak reverse current

tp = 100 µs; square wave;

Tamb =25 °C; prior to surge

see Tables 1 and 2

PZSM

non-repetitive peak reverse power

dissipation

tp = 100 µs; square wave;

Tamb =25 °C; prior to surge

−

Ptot

total power dissipation

Tamb =25 °C; note 1

−

300

Tstg

storage temperature

−65

+150

°C

junction temperature

−65

+150

°C

SYMBOL

PARAMETER

CONDITIONS

MAX.

UNIT

forward voltage

IF = 10 mA; see Fig.3

0.9

IF = 100 mA; see Fig.3

1.1

reverse current;

BZX384-B/C2V4

VR =1V

µA

BZX384-B/C2V7

VR =1V

µA

BZX384-B/C3V0

VR =1V

µA

BZX384-B/C3V3

VR =1V

µA

BZX384-B/C3V6

VR =1V

µA

BZX384-B/C3V9

VR =1V

µA

BZX384-B/C4V3

VR =1V

µA

BZX384-B/C4V7

VR =2V

µA

BZX384-B/C5V1

VR =2V

µA

BZX384-B/C5V6

VR =2V

µA

BZX384-B/C6V2

VR =4V

µA

BZX384-B/C6V8

VR =4V

µA

BZX384-B/C7V5

VR =5V

µA

BZX384-B/C8V2

VR = 5 V

700

BZX384-B/C9V1

VR = 6 V

500

BZX384-B/C10

VR = 7 V

200

BZX384-B/C11

VR = 8 V

100

BZX384-B/C12

VR = 8 V

100

BZX384-B/C13

VR = 8 V

100

BZX384-B/C15 to 75

VR = 0.7VZnom

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