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HD1 Datasheet(PDF) 3 Page - NEC

Part # HD1
Description  on-chip resistor NPN silicon epitaxial transistor For mid-speed switching
PDF  6 Pages
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Manufacturer  NEC [NEC]
Direct Link  http://www.nec.com/
Logo NEC - NEC

HD1 Datasheet(HTML) 3 Page - NEC

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Data Sheet D16182EJ2V0DS
3
HD1 SERIES
HD1A4M
ELECTRICAL CHARACTERISTICS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
ICBO
VCB = 60 V, IE = 0
100
nA
DC current gain
hFE1 **
VCE = 2.0 V, IC = 0.1 A
200
−
DC current gain
hFE2 **
VCE = 2.0 V, IC = 0.5 A
300
−
DC current gain
hFE3 **
VCE = 2.0 V, IC = 1.0 A
200
−
Low level output voltage
VOL **
VIN = 5.0 V, IC = 0.1 A
0.2
V
Low level input voltage
VIL **
VCE = 5.0 V, IC = 100
µA
0.3
V
Input resistance
R1
710
13
k
Ω
E-to-B resistance
R2
710
13
k
Ω
** PW
≤ 350
µs, duty cycle ≤ 2 %
HD1L2Q
ELECTRICAL CHARACTERISTICS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
ICBO
VCB = 60 V, IE = 0
100
nA
DC current gain
hFE1 **
VCE = 2.0 V, IC = 0.1 A
200
−
DC current gain
hFE2 **
VCE = 2.0 V, IC = 0.5 A
300
−
DC current gain
hFE3 **
VCE = 2.0 V, IC = 1.0 A
200
−
Low level output voltage
VOL **
VIN = 5.0 V, IC = 0.8 A
0.5
V
Low level input voltage
VIL **
VCE = 5.0 V, IC = 100
µA
0.3
V
Input resistance
R1
329
470
611
Ω
E-to-B resistance
R2
3.29
4.7
6.11
k
Ω
** PW
≤ 350
µs, duty cycle ≤ 2 %
HD1F2Q
ELECTRICAL CHARACTERISTICS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
ICBO
VCB = 60 V, IE = 0
100
nA
DC current gain
hFE1 **
VCE = 2.0 V, IC = 0.1 A
100
−
DC current gain
hFE2 **
VCE = 2.0 V, IC = 0.5 A
300
−
DC current gain
hFE3 **
VCE = 2.0 V, IC = 1.0 A
200
−
Low level output voltage
VOL **
VIN = 5.0 V, IC = 0.8 A
0.5
V
Low level input voltage
VIL **
VCE = 5.0 V, IC = 100
µA
0.3
V
Input resistance
R1
154
220
286
Ω
E-to-B resistance
R2
1.54
2.2
2.86
k
Ω
** PW
≤ 350
µs, duty cycle ≤ 2 %



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