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F2270 Datasheet(PDF) 4 Page - Integrated Device Technology

Part # F2270
Description  Voltage Variable Attenuator
PDF  29 Pages
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Manufacturer  IDT [Integrated Device Technology]
Direct Link  http://www.idt.com
Logo IDT - Integrated Device Technology

F2270 Datasheet(HTML) 4 Page - Integrated Device Technology

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F2270 Datasheet
© 2019 Integrated Device Technology, Inc.
4
January 16, 2019
Absolut e M a x im um Ra t ings
Stresses above those listed below may cause permanent damage to the device. Functional operation of the device at these or any other
conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions
for extended periods may affect device reliability.
T a ble 2 .
Absolut e M a x im um Ra t ings
Parameter
Symbol
Minimum
Maximum
Units
VDD to GND
VDD
-0.3
6.0
V
VMODE to GND
VMODE
-0.3
Lower of
(VDD, 3.9)
V
VCTRL to GND
VCTRL
-0.3
Lower of
(VDD + 3.0, 5.3)
V
RF1, RF2 to GND
VRF
-0.3
0.3
V
RF1 or RF2 Input Power Applied for 24 Hours Maximum
(VDD applied at 1GHz and TEP [Exposed Paddle] = +85°C, ZS = ZL =
75Ω)
PMAX24
+28
dBm
Junction Temperature
TJMAX
+150
°C
Storage Temperature Range
TSTOR
-65
+150
°C
Lead Temperature (soldering, 10s)
TLEAD
+260
°C
Electrostatic Discharge – HBM
(JEDEC/ESDA JS-001-2012)
VESDHMB
2000
(Class 2)
V
Electrostatic Discharge – CDM
(JEDEC 22-C101F)
VESDHCDM
500
(Class C2)
V



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