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1SS397W Datasheet(PDF) 1 Page - SEMTECH ELECTRONICS LTD. |
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1SS397W Datasheet(HTML) 1 Page - SEMTECH ELECTRONICS LTD. |
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1 / 2 page  Dated：24/12/2011 Rev：01 ® SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited 1SS397W Silicon Epitaxial Planar Diodes High Voltage Switching Diode For high voltage and high speed switching applications Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Maximum Peak Reverse Voltage VRM 420 V Reverse Voltage VR 400 V Average Rectified Forward Current IF(AV) 100 mA Maximum Peak Forward Current IFM 300 mA Non-repetitive Peak Forward Surge Current (tp = 10 ms) IFSM 2 A Power Dissipation PD 100 mW Junction Temperature Tj 125 O C Storage Temperature Range Tstg - 55 to + 125 O C Characteristics at Ta = 25 OC Parameter Symbol Typ. Max. Unit Forward Voltage at IF = 100 mA VF - 1.3 V Reverse Current at VR = 300 V at VR = 400 V IR IR - - 0.1 1 µA Total Capacitance at VR = 0, f = 1 MHz CT - 5 pF Reverse Recovery Time at IF = 10 mA trr 0.5 - μs 1 3 2 SEMTECH |
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