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1998

©

Document No. D16131EJ3V0DS00

Date Published April 2002 N CP(K)

Printed in Japan

SILICON POWER TRANSISTOR

2SB601

PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)

FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING

DATA SHEET

2002

FEATURES

• High-DC current gain due to Darlington connection

• Low collector saturation voltage

• Low collector cutoff current

• Ideal for use in direct drive from IC output for magnet drivers such

as treminal equipment or cash registers

ABSOLUTE MAXIMUM RATINGS (Ta = 25

°°°°C)

Parameter

Symbol

Ratings

Unit

Collector to base voltage

−100

V

Collector to emitter voltage

−100

V

Emitter to base voltage

−7.0

V

Collector current

–

+5.0

A

Collector current

–

+8.0

A

Base current

−0.5

A

Total power dissipation

°C)

1.5

W

Total power dissipation

°C)

30

W

Junction temperature

150

°C

Storage temperature

−55 to +150

°C

*PW

≤ 10 ms, duty cycle ≤ 50%

PACKAGE DRAWING (UNIT: mm)

(/(&752'(

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