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2SC5831 Datasheet(PDF) 2 Page - Sanyo Semicon Device

Part # 2SC5831
Description  Driver Applications
PDF  4 Pages
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Manufacturer  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

2SC5831 Datasheet(HTML) 2 Page - Sanyo Semicon Device

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2SC5831
No.7261-2/4
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
DC Current Gain
hFE
VCE=5V, IC=1A
1000
4000
Gain-Bandwidth Product
fT
VCE=5V, IC=1A
180
MHz
Inductive Load
Es / b
L=100mH, RBE=100Ω
25
mJ
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=1A, IB=4mA
1.0
1.5
V
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=1A, IB=4mA
2.0
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=100µA, IE=0
55
65
75
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=1mA, RBE=∞
55
65
75
V
Turn-ON Time
ton
See specified Test Circuit.
0.2
µs
Storage Time
tstg
See specified Test Circuit.
3.5
µs
Fall Time
tf
See specified Test Circuit.
0.5
µs
Switching Time Test Circuit
Es / b Test Circuit
1000
100
7
5
7
5
3
2
10000
7
5
3
2
3
2
72
3
5
35
7
0.1
1.0
23
5
hFE -- IC
ITR06007
2.0
1.6
0.4
0.8
1.2
0
01
3
24
5
IC -- VCE
IB=0
150
µA
200µA
250µ
A
300µ
A
1000
µA
1500
µA
350µ
A
400µ
A
450µ
A
500
µA
ITR06005
VCE=5V
Ta=120
°C
25°
C
--40
°C
Cob -- VCB
2.4
1.6
2.0
1.2
0.8
0.4
0
0
0.4
0.8
1.2
2.8
2.0
2.4
1.6
IC -- VBE
ITR06006
VCE=5V
ITR06008
10
100
7
5
3
2
1000
7
5
3
2
23
5
7
0.1
1.0
23
5
7
10
23
5
f=1MHz
Collector-to-Emitter Voltage, VCE -- V
Base-to-Emitter Voltage, VBE -- V
Collector Current, IC -- A
Collector-to-Base Voltage, VCB -- V
VBB= --5V
VCC=20V
+VCC
INPUT
OUTPUT
100
µF
470
µF
50
Ω
RB
RL
20
Ω
VR
IC=250A, IB1= --250A, IB2=1A
PW=50
µs, Duty Cycle≤1%
IB1= --IB2=4mA
TUT
RBE
IB
VCC=20V, RBE=100Ω
TUT
L
300
Ω
10k
Ω
++
SW



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