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BT169W Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # BT169W
Description  isc Thyristors
PDF  1 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BT169W Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

  BT169W Datasheet HTML 1Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
isc Thyristors
BT169W
FEATURES
·
With SOT-223 package
·
Sensitive gate trigger current
·
Low reverse and forward blocking current
·
Low holding current
·
For general purpose switching and phase control applications.
·
Minimum Lot-to-Lot variations for robust device performance
and reliable operation
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MIN
UNIT
VDRM
Repetitive peak off-state voltage
600
V
VRRM
Repetitive peak off-state voltage
600
V
IT(AV)
Average on-state current
0.63
A
IT(RMS)
RMS on-state current
1
A
PGM
Peak gate power
2
W
PG(AV)
Average gate power
0.1
W
ITSM
Non-repetitive peak on-state current
8
A
Tj
Operating junction temperature
-40~110
℃
Tstg
Storage temperature
-40~150
℃
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
IRRM
Repetitive peak off-state voltage VRRM=600V
5
μ
A
Repetitive peak reverse voltage
VRRM=600V;Tj=110℃
100
IDRM
Repetitive peak reverse current
VRRM=600V
5
μ
A
Repetitive peak off-state current
VDRM=600V;Tj=110℃
100
IGT
Gate trigger current
VD= 12V; IT= 10mA
120
μ
A
VTM
On-state voltage
IT=2A
1.5
V
IH
Holding current
IGT=0.5mA ,VD=12V
5
mA
VGT
Gate trigger voltage
VD= 12V; IT= 10mA
0.8
V


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