BUL654 datasheet(2/4 Pages) STMICROELECTRONICS

Part #	BUL654

Description	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

PDF	4 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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2 / 4 page

THERMAL DATA

Rthj-case

Thermal Resistance Junction-Case

Max

1.25

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICES

Collector Cut-off

Current (VBE = 0)

VCE = 700 V

Tc = 125

500

µA

ICEO

Collector Cut-off

Current (IB = 0)

VCE = 400 V

100

µA

VCEO(sus)

∗ Collector-Emitter

Sustaining Voltage

(IB = 0)

IC = 100 mA

L = 25 mH

400

VEBO

Emitter-Base Voltage

(IC = 0)

IE = 10 mA

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 2 A

IB = 0.4 A

IC = 7 A

IB = 1.4 A

0.15

0.35

0.3

0.7

VBE(sat)

∗ Base-Emitter

Saturation Voltage

IC = 2 A

IB = 0.4 A

IC = 7 A

IB = 1.4 A

0.85

1.2

hFE

∗

DC Current Gain

IC = 10 mA

VCE = 2 V

IC = 2 A

VCE = 2 V

IC = 6 A

VCE = 2 V

IC = 12 A

VCE = 5 V

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

BUL654

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