BUL312FP datasheet(2/6 Pages) STMICROELECTRONICS

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THERMAL DATA

Rthj-case

Rthj-amb

Thermal Resistance Junction-Case

Max

Thermal Resistance Junction-Ambient

Max

3.5

62.5

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICES

Collector Cut-off

Current (VBE = 0)

VCE = 1150 V

Tj = 125

ICEO

Collector Cut-off

Current (IB = 0)

VCE = 500 V

250

µA

VCEO(sus)

∗ Collector-Emitter

Sustaining Voltage

(IB = 0)

IC = 100 mA

L= 25 mH

500

VEBO

Emitter-Base Voltage

(IC = 0)

IE = 10 mA

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 1 A

IB = 0.2 A

IC = 2 A

IB = 0.4 A

IC = 3 A

IB = 0.6 A

0.5

0.7

1.1

VBE(sat)

∗ Base-Emitter

Saturation Voltage

IC = 1 A

IB = 0.2 A

IC = 2 A

IB = 0.4 A

IC = 3 A

IB = 0.6 A

1.1

1.2

hFE

∗

DC Current Gain

IC = 10 mA

VCE = 5 V

IC = 3 A

VCE = 2.5 V

13.5

INDUCTIVE LOAD

Storage Time

Fall Time

IC = 2 A

IB1 = 0.4 A

VBE(off) = -5 V

RBB = 0

Ω

VCL = 250 V

L = 200

µH

(see fig. 1)

1.2

1.9

160

µs

INDUCTIVE LOAD

Storage Time

Fall Time

IC = 2 A

IB1 = 0.4 A

VBE(off) = -5V

RBB = 0

Ω

VCL = 250 V

L = 200

µH

Tj = 125

(see fig. 1)

1.8

150

µs

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Safe Operating Areas

Derating Curve

BUL312FP

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