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CP108 Datasheet(PDF) 1 Page - Central Semiconductor Corp |
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CP108 Datasheet(HTML) 1 Page - Central Semiconductor Corp |
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1 / 2 page ![]() PRINCIPAL DEVICE TYPES 1N5817 1N5818 1N5819 CXSH-4 CZSH-4 Process EPITAXIAL PLANAR Die Size 52 X 52 MILS Die Thickness 9 MILS Anode Bonding Pad Area 47 X 47 MILS Top Side Metalization Al - 20,000Å Back Side Metalization Au - 10,000Å PROCESS DETAILS R8 (9 -September 2003) GEOMETRY BACKSIDE CATHODE 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com GROSS DIE PER 4 INCH WAFER 5,110 Central Semiconductor Corp. TM PROCESS CP108 Schottky Rectifier Schottky Barrier Rectifier Chip - 2.0 Amp |
Similar Part No. - CP108 |
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Similar Description - CP108 |
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