2SJ648 datasheet(2/6 Pages) NEC

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Data Sheet D16597EJ2V0DS

2SJ648

ELECTRICAL CHARACTERISTICS (TA = 25°C)

CHARACTERISTICS

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Zero Gate Voltage Drain Current

IDSS

VDS =

−20 V, VGS = 0 V

−1.0

µA

Gate Leakage Current

IGSS

VGS = m12 V, VDS = 0 V

m10

µA

Gate Cut-off Voltage

VGS(off)

VDS =

−10 V, ID = −1.0 mA

−0.8

−1.3

−1.8

Forward Transfer Admittance

Note

| yfs |

VDS =

−10 V, ID = −0.2 A

0.2

0.6

Drain to Source On-state Resistance

Note

RDS(on)1

VGS =

−4.5 V, ID = −0.2 A

1.17

1.45

Ω

RDS(on)2

VGS =

−4.0 V, ID = −0.2 A

1.25

1.55

Ω

RDS(on)3

VGS =

−2.5 V, ID = −0.15 A

2.25

2.98

Ω

Input Capacitance

Ciss

VDS = –10 V

Output Capacitance

Coss

VGS = 0 V

Reverse Transfer Capacitance

Crss

f = 1 MHz

3.0

Turn-on Delay Time

td(on)

VDD =

−10 V, ID = −0.2 A

Rise Time

VGS =

−4.0 V

Turn-off Delay Time

td(off)

RG = 10

Ω

Fall Time

Body Diode Forward Voltage

VF(S-D)

IF = 0.4 A, VGS = 0 V

0.93

Note Pulsed PW

≤ 350

µs, Duty Cycle ≤ 2%

TEST CIRCUIT SWITCHING TIME

PG.

VGS (−)

D.U.T.

VDD

τ = 1 s

Duty Cycle

≤ 1%

VGS

Wave Form

VDS

Wave Form

VGS(−)

VDS(−)

10%

90%

VGS

VDS

ton

toff

td(on)

td(off)

10%

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