©

1987

SILICON SWITCHING DIODE

1SS305

HIGH SPEED SWITCHING

SILICON EPITAXIAL DIODE

DATA SHEET

Document No. D16310EJ2V0DS00 (2nd edition)

(Previous No. DC-2102)

Date Published July 2002 NS CP(K)

Printed in Japan

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

FEATURES

• Wide applications including switching, limitter, clipper.

ABSOLUTE MAXIMUM RATINGS

Peak Reverse Voltage

100

V

DC Reverse Voltage

100

V

Peak Forward Current

300

mA

Average Rectified Current

100

mA

DC Forward Current

100

mA

Maximum Temperatures

Junction Temperature

150

°C

Storage Temperature Range

–55 to + 150

°C

Thermal Resistance

Junction to Ambient

0.85

°C/mW

CHARACTERISTICS

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

720

850

mV

850

1000

mV

Forward Voltage

950

1200

mV

Reverse Current

1.0

µA

Capacitance

2.0

4.0

pF

Reverse Recovery Time

Ω,

See Test Circuit.

3.0

ns

PACKAGE DIMENSIONS (Unit: mm)

2.1

±0.1

1.25

±0.1

3

Marking

2

1

CONNECTION DIAGRAM (Top View)

2

1

3

1. N.C.

2. Anode

3. Cathode

Marking : A14