1998

©

Document No. D13582EJ1V0DS00 (1st edition)

Date Published April 2002 N CP(K)

Printed in Japan

COMPOUND TRANSISTOR

BA1L4Z

on-chip resistor NPN silicon epitaxial transistor

For mid-speed switching

DATA SHEET

2002

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

FEATURES

•

On-chip bias resistor

Ω)

•

Complementary transistor with BN1L4Z

ABSOLUTE MAXIMUM RATINGS (Ta = 25

°°°°C)

Parameter

Symbol

Ratings

Unit

Collector to base voltage

60

V

Collector to emitter voltage

50

V

Emitter to base voltage

5V

Collector current (DC)

100

mA

Collector current (Pulse)

200

mA

Total power dissipation

250

mW

Junction temperature

150

°C

Storage temperature

−55 to +150

°C

*PW

≤ 10 ms, duty cycle ≤ 50 %

PACKAGE DRAWING (UNIT: mm)

ELECTRICAL CHARACTERISTICS (Ta = 25

°°°°C)

Parameter

Symbol

Conditions

MIN.

TYP.

MAX.

Unit

Collector cutoff current

100

nA

DC current gain

135

270

600

−

DC current gain

100

260

−

Collector saturation voltage

0.05

0.2

V

Low level input voltage

µA

0.57

0.5

V

High level input voltage

4.0

1.7

V

Input resistance

32.9

47

61.1

k

Ω

Turn-on time

0.2

µs

Storage time

5.0

µs

Turn-off time

Ω

µs

duty cycle

≤2 %

6.0

µs

** Pulse test PW

≤ 350

µs, duty cycle ≤ 2 %

Marking

Q

P

K

135 to 270

200 to 400

300 to 600

Electrode Connection

1. Emitte

2. Collector

3. Base