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UPA801T Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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UPA801T Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.cn isc & iscsemi is registered trademark 1 isc Silicon NPN RF Transistor UPA801T DESCRIPTION · With SOT-363 packaging · Low voltage use · Ultra super mini mold package · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for use in low noise and small signal amplifiers from VHF band to UHF band ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 2.5 V IC Collector Current-Continuous 100 mA PC Collector Power Dissipation @TC=25℃ 150 mW TJ Max.Junction Temperature 150 ℃ Tstg Storage Temperature Range -60~150 ℃ |
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