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MTP100 Datasheet(PDF) 2 Page - Nell Semiconductor Co., Ltd |
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MTP100 Datasheet(HTML) 2 Page - Nell Semiconductor Co., Ltd |
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2 / 3 page ![]() MAJOR RATINGS AND CHARACTERISTICS (T = 25°C unless otherwise noted) A PARAMETER V V SYMBOL MTP100 UNIT 1900 08 900 1100 1300 1800 800 1000 1200 1600 18 12 10 16 1700 1800 800 1000 1200 1600 V Maximum repetitive peak reverse voltage Peak reverse non-repetitive voltage Maximum DC blocking voltage Maximum average forward rectified output current Peak forward surge current single sine-wave superimposed on rated load Rating (non-repetitive, for t greater than 1 ms and less than 10 ms) for fusing RMS isolation voltage from case to leads Operating junction storage temperature range VRRM VRSM IFSM VDC IF(AV) VISO 2 I t 2500 7200 100 -40 to 150 1200 2 A s A A V ºC ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) A PARAMETER V µ A SYMBOL MTP100 UNIT 08 18 12 10 16 Maximum instantaneous forward drop per diode Maximum reverse DC current at rated DC blocking VF IR 5000 1.3 20 voltage per diod TEST CONDITIONS I = 100A F T = 25°C A T = 150°C A THERMAL AND MECHANICAC (T = 25°C unless otherwise noted) A PARAMETER ° C/W SYMBOL MTP100 UNIT 08 18 12 10 16 Typical thermal resistance (1) With heatsink, single side heat dissipation, half sine wave. (1) RθJC 0.20 (2) M6 screw. Notes Storage temperature range TSTG -40 to 125 ºC TJ TEST CONDITIONS junction to case Single-side heat dissipation, sine half wave Mounting ± 10 % to heatsink M6 A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. 4 Nm to terminals M5 4 Approximate weight 195 torque g - Module type: ”MTP” for 3Ø Brıdge 1 2 3 - RRM Device code - Voltage code: code x 100 = V I rating: "100" for 100A F(AV) 2 MTP 100 16 3 1 RoHS RoHS Nell High Power Products MTP100 Page 2 of 3 www.nellsemi.com |
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