1998

©

Document No. D16146EJ3V0DS00

Date Published April 2002 N CP(K)

Printed in Japan

SILICON TRANSISTOR

2SA675

PNP SILICON EPITAXIAL TRANSISTOR

FOR DRIVING FLUORESCENT INDICATOR PANNEL

DATA SHEET

2002

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

The 2SA675 is a resin sealed mold transistor and is ideal for

dynamic drivers of counting indicator pannel such as fluorescent

indicator pannel due to high voltage.

•

High voltage

•

Excellent linearity for current of DC current gain

ABSOLUTE MAXIMUM RATINGS (Ta = 25

°°°°C)

Parameter

Symbol

Ratings

Unit

Collector to base voltage

−80

V

Collector to emitter voltage

−80

V

Emitter to base voltage

−5.0

V

Collector current

−100

mA

Total power dissipation

250

mW

Junction temperature

125

°C

Storage temperature

−55 to +125

°C

Ω

PACKAGE DRAWING (UNIT: mm)

ELECTRICAL CHARACTERISTICS (Ta = 25

°°°°C)

Parameter

Symbol

Conditions

MIN.

TYP.

MAX.

Unit

Collector cutoff current

−1.0

µA

Emitter cutoff current

−1.0

µA

DC current gain

60

120

DC current gain

50

120

300

Collector saturation voltage

−0.10

−1.50

V

Base saturation voltage

−0.74

−1.20

V

Gain bandwidth product

100

170

MHz

Output capacitance

4.5

10

pF

Storage time

Refer to the test circuit.

0.5

1.0

µs