Document No. D15588EJ2V0DS00 (2nd edition)

Date Published April 2002 N CP(K)

Printed in Japan

SILICON POWER TRANSISTOR

2SA1649, 2SA1649-Z

PNP SILICON EPITAXIAL POWER TRANSISTOR

FOR HIGH-SPEED SWITCHING

DATA SHEET

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

©

2002

The 2SA1649 is a mold power transistor developed for high-

speed switching and features a very low collector-to-emitter

saturation voltage.

This transistor is ideal for use in switching regulators, DC/DC

converters, motor drivers, solenoid drivers, and other low-voltage

power supply devices, as well as for high-current switching.

FEATURES

• Available for high-current control in small dimension

• Z type is a lead processed product and is deal for mounting a

hybrid IC.

• Mold package that does not require an insulating board or

insulation bushing

• Low collector saturation voltage:

• Fast switching speed:

• High DC current amplifiers and excellent linearity

ABSOLUTE MAXIMUM RATINGS (Ta = 25

°°°°C)

Parameter

Symbol

Ratings

Unit

Collector to base voltage

−40

V

Collector to emitter voltage

−30

V

Emitter to base voltage

−7.0

V

Collector current (DC)

−10

A

Collector current (pulse)

−20

A

Base current (DC)

−3.5

A

Total power dissipation

°C)

15

W

Total power dissipation

°C)

1.0**, 2.0***

W

Junction temperature

150

°C

Storage temperature

−55 to +150

°C

PACKAGE DRAWING (UNIT: mm)

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*:

PW

≤ 300

µs, duty cycle ≤ 10%

**: Printing board mounted

***: 7.5 mm

2

× 0.7 mm ceramic board mounted