1998

©

Document No. D15591EJ2V0DS00 (2nd edition)

Date Published April 2002 N CP(K)

Printed in Japan

SILICON POWER TRANSISTOR

2SA1843

PNP SILICON EPITAXIAL POWER TRANSISTOR

FOR HIGH-SPEED SWITCHING

DATA SHEET

2002

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

This transistor is ideal for use as a driver in DC/DC converters and actuators.

In addition, this transistor features a package that can be auto-mounted in radial taping specifications, thus

contributing to mounting cost reduction.

FEATURES

• Auto-mounting possible in radial taping specifications

• Resin-molded insulation type package with power rating of 1.8 W in stand-alone conditions

≤ −0.3 V

≥ 100

• Fast switching speed

ABSOLUTE MAXIMUM RATINGS (Ta = 25

°°°°C)

Parameter

Symbol

Conditions

Ratings

Unit

Collector to base voltage

−100

V

Collector to emitter voltage

−60

V

Emitter to base voltage

−7.0

V

Collector current (DC)

−5.0

A

Collector current (pulse)

PW

≤ 300

µs, duty cycle ≤ 2%

−10

A

Base current (DC)

−2.5

A

Total power dissipation

Ta = 25

°C

1.8

W

Junction temperature

150

°C

Storage temperature

−55 to +150

°C