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1998

©

Document No. D15604EJ2V0DS00 (2nd edition)

Date Published April 2002 N CP(K)

Printed in Japan

SILICON POWER TRANSISTOR

2SC4814

NPN SILICON EPITAXIAL TRANSISTOR

FOR HIGH-SPEED SWITCHING

DATA SHEET

2002

precision control such as PWM control for pulse motors or brushless motors in OA and FA equipment and for

solenoid driving in automotive equipment.

In addition, this transistor features a package that can be auto-mounted in radial taping specifications, thus

contributing to mounting cost reduction.

FEATURES

≤ 0.3 V

• On-chip dumper-diode

• Auto-mounting possible in radial taping specifications

ABSOLUTE MAXIMUM RATINGS (Ta = 25

°°°°C)

Parameter

Symbol

Conditions

Ratings

Unit

Collector to base voltage

120

V

Collector to emitter voltage

100

V

Emitter to base voltage

7.0

V

Collector current (DC)

±2.5

A

Collector current (pulse)

PW

≤ 300

µs, duty cycle ≤ 10%

±5.0

A

Base current (DC)

1.0

A

Total power dissipation

Ta = 25

°C

1.8

W

Junction temperature

150

°C

Storage temperature

−55 to +150

°C