2SC4815 datasheet(2/6 Pages) NEC

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Data Sheet D15605EJ3V0DS

2SC4815

ELECTRICAL CHARACTERISTICS (Ta = 25

°°°°C)

Parameter

Symbol

Conditions

MIN.

TYP.

MAX.

Unit

Collector to emitter voltage

VCEO(SUS)

IC = 5.0 A, IB = 0.5 A, L = 1 mH

Collector to emitter voltage

VCEX(SUS)

IC = 2.5 A, IB1 =

−IB2 = 0.25 A

VBE(OFF) =

−1.5 V, L = 180

µH, Clamped

Collector cutoff current

ICBO

VCB = 100 V, IE = 0

µA

Emitter cutoff current

IEBO

VEB = 7.0 V, IC = 0

µA

DC current gain

hFE1*VCE = 2.0 V, IC = 0.5 A

100

DC current gain

hFE2*VCE = 2.0 V, IC = 1.0 A

100

200

400

DC current gain

hFE3*VCE = 2.0 V, IC = 3.0 A

Collector saturation voltage

VCE(sat)1*IC = 3.0 A, IB = 0.15 A

0.15

0.3

Collector saturation voltage

VCE(sat)2*IC = 4.0 A, IB = 0.2 A

0.3

0.5

Base saturation voltage

VBE(sat)1*IC = 3.0 A, IB = 0.15 A

0.9

1.2

Base saturation voltage

VBE(sat)2*IC = 4.0 A, IB = 0.2 A

1.2

1.5

Collector capacitance

Cob

VCB = 10 V, IE = 0 , f = 1.0 MHz

Gain bandwidth product

VCE = 10 V, IC = 0.5 A

150

MHz

Turn-on time

ton

0.1

µs

Storage time

tstg

1.0

µs

Fall time

IC = 3.0 A, RL = 17

Ω,

IB1 =

−IB2 = 0.15 A, VCC ≅ 50 V

Refer to the test circuit.

0.25

µs

* Pulse test PW

≤ 350

µs, duty cycle ≤ 2%

hFE CLASSIFICATION

Marking

hFE2

100 to 200

150 to 300

200 to 400

PACKAGE DRAWING (UNIT: mm)

TAPING SPECIFICATION

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