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1998

©

Document No. D16137EJ1V0DS00

Date Published April 2002 N CP(K)

Printed in Japan

DARLINGTON POWER TRANSISTOR

2SD1592

NPN SILICON TRIPLE DIFFUSED TRANSISTOR (DARLINGTON CONNECTION)

FOR HIGH-VOLTAGE LOW-SPEED SWITCHING

DATA SHEET

2002

FEATURES

• High DC current gain due to Darlington connection

• Low collector saturation

• Reverse deterrence type

• Ideal for use in devices such as pulse motor drivers and relay

drivers of PC terminals, and ignitors of general-purpose engines.

• Mold package that does not require an insulating board or

insulation bushing

ABSOLUTE MAXIMUM RATINGS (Ta = 25

°°°°C)

Parameter

Symbol

Ratings

Unit

Collector to base voltage

500

V

Collector to emitter voltage

+300,

−10

V

Emitter to base voltage

10

V

Collector current

5.0

A

Collector current

A

Base current

0.5

A

Total power dissipation

°C)

30

W

Total power dissipation

°C)

1.5

W

Junction temperature

150

°C

Storage temperature

−55 to +150

°C

*PW

≤ 300

µs, duty cycle ≤ 10%

PACKAGE DRAWING (UNIT: mm)

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