The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

1998

©

Document No. D16141EJ2V0DS00

Date Published April 2002 N CP(K)

Printed in Japan

SILICON POWER TRANSISTOR

2SB548, 549/2SD414, 415

PNP/NPN SILICON EPITAXIAL TRANSISTOR

FOR LOW-FREQUENCY POWER AMPLIFIERS

DATA SHEET

2002

FEATURES

• Ideal for audio amplifier drivers with 30 W to 50 W output

• High voltage

• Available for small mount spaces due to small and thin package

• Easy to be attached to radiators

ABSOLUTE MAXIMUM RATINGS (Ta = 25

°°°°C)

Parameter

Symbol

2SB548/

2SD414

2SB549/

2SD415

Unit

Collector to base voltage

−100/120

V

Collector to emitter voltage

−80/80

−100/100

V

Emitter to base voltage

−5.0/5.0

V

Collector current

−0.8/0.8

A

Collector current

−1.5/1.5

A

Total power dissipation

°C)

1.0

W

Total power dissipation

°C)

10

W

Junction temperature

150

°C

Storage temperature

−55 to +150

°C

*PW

≤ 10 ms, duty cycle ≤ 50%

PACKAGE DRAWING (UNIT: mm)

Electrode Connection

ELECTRICAL CHARACTERISTICS (Ta = 25

°°°°C)

Parameter

Symbol

Conditions

MIN.

TYP.

MAX.

Unit

Collector cutoff current

−1.0/1.0

µA

Emitter cutoff current

−1.0/1.0

µA

DC current gain

20

DC current gain

40

90

320

Collector saturation voltage

−0.4/0.3

−2.0/2.0

V

Base saturation voltage

−0.9/0.9

−1.5/1.5

V

Gain bandwidth product

70/45

MHz

Collector capacitance

25/15

pF

*

Pulse test PW

≤ 350

µs, duty cycle ≤ 2%

Marking

S

R

Q

P

40 to 80

60 to 120

100 to 200

160 to 320