2SD2162 datasheet(2/6 Pages) NEC

Part #	2SD2162

Description	NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING

PDF	6 Pages

Scroll/Zoom	100%

Manufacturer	NEC [NEC]

Direct Link	http://www.nec.com/

Logo

2 / 6 page

Data Sheet D14865EJ2V0DS

2SD2162

ELECTRICAL CHARACTERISTICS (TA = 25

°°°°C)

Parameter

Symbol

Conditions

MIN.

TYP.

MAX.

Unit

Collector cutoff current

ICBO

VCB = 100 V, IE = 0 A

1.0

µA

hFE1

VCE = 2.0 V, IC = 3.0 A

Note

2,000

15,000

DC current gain

hFE2

VCE = 2.0 V, IC = 5.0 A

Note

500

Collector saturation voltage

VCE(sat)

IC = 3.0 A, IB = 3.0 mA

Note

0.9

1.5

Base saturation voltage

VBE(sat)

IC = 3.0 A, IB = 3.0 mA

Note

1.6

2.0

Gain bandwidth product

VCE = 5.0 V, IC = 0.8 A

MHz

Collector capacitance

Cob

VCB = 10 V, IE = 0 A, f = 1.0 MHz

Turn-on time

ton

1.0

µs

Storage time

tstg

3.5

µs

Fall time

IC = 3.0 A, RL = 16.7

Ω,

IB1 =

−IB2 = 3.0 mA, VCC ≅ 50 V

Refer to the test circuit.

1.2

µs

Note Pulse test PW

≤ 350

µs, duty cycle ≤ 2%

hFE CLASSIFICATION

Marking

hFE1

2,000 to 5,000

3,000 to 7,000

5,000 to 15,000

SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT

%DVH FXUUHQW

ZDYHIRUP

&ROOHFWRUFXUUHQW

ZDYHIRUP

2SD2162 Datasheet(PDF) 2 Page - NEC

2SD2162 Datasheet(HTML) 2 Page - NEC

Html Pages

1 2 3 4 5 6

Datasheet Download

Link URL