2

DEC-23-2004

N-Channel Logic Level Enhancement

Mode Field Effect Transistor

P2003BDG

TO-252 (DPAK)

Lead-Free

NIKO-SEM

On-State Drain Current

1

35

A

23

31

Drain-Source On-State

Resistance

1

15.5

20

mΩ

Forward Transconductance

1

14

28

S

DYNAMIC

Input Capacitance

530

700

Output Capacitance

200

275

Reverse Transfer Capacitance

60

90

pF

Total Gate Charge

2

8.4

11

Gate-Source Charge

2

2.5

3.1

Gate-Drain Charge

2

6.4

9.6

nC

Turn-On Delay Time

2

6.2

9.3

Rise Time

2

11

17

Turn-Off Delay Time

2

23

34

Fall Time

2

18

27

nS

Continuous Current

35

Pulsed Current

3

120

A

Forward Voltage

1

1.1

1.4

V

Reverse Recovery Time

15

18

nS

Reverse Recovery Charge

2

3

nC

≤ 300 µsec, Duty Cycle ≤ 2％.

REMARK: THE PRODUCT MARKED WITH “P2003BDG”, DATE CODE or LOT #

Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name.