2SC2078 datasheet(1/1 Pages) ELEFLOW

Part #	2SC2078

Description	NPN Epitaxial Planar Silicon Transistor

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Manufacturer	ELEFLOW [eleflow technologies co., ltd.]

Direct Link	http://www.eleflow.com/

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2SC2078

NPN Epitaxial Planar Silicon Transistor

Application：

High frequency power amplifier

High Gain：Gp≥12dB

@Vcc=12V. f=27MHz Po=4W

Package：TO-220AB

Absolute Maximum Ratings at Ta = 25°C

Item

Symbol

Ratings

Unit

Collector-to-Base Voltage

VCBO

80

V

Collector-to-Emitter Voltage

VCEO

35

V

Emitter-to-Base Voltage

VEBO

5

V

Collector Current

IC

3

A

Collector Current (Pulse)

ICP

5

A

1.2

W

PC

10

W

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

-55---125

°C

Electrical Characteristics at Ta = 25°C

Ratings

Item

Symbol

Test conditions

Min

Typ

Max

Unit

Collector to base voltage V(BR)CBO IC=100μA, IB=0

80

V

Collector

to

emitter

voltage

V(BR)CEO IC=1mA, IB=0

35

V

Collector cutoff current

ICBO

VCB=40V, IE=0

10

μA

Emitter cutoff current

IEBO

VEB=4V, IC=0

10

μA

Collector to emitter

saturation

voltage

VCE(sat)

IC=1A, IB=0.1A

0.16

0.6

V

DC current transfer ratio

hFE

VCE=5V, IC=0.5A

40

200

*

Gain bandwidth product

fT

VCE=10V, IC=0.1A

150

MHz

Output capacitance

Cob

VCB=10V, f=1MHz

45

60

pF

Output power

Po

4.0

W

Power efficiency

VCC=12V,

f=27MHz,

Pi=0.2W

60

%

The 2SC2078 are classified by hFE as follows :

C: 40 to 80

D: 80 to120

E: 100 to 200

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2SC2078 Datasheet(PDF) 1 Page - eleflow technologies co., ltd.

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