Features

≤15 µA

Benefits

Electrostatic sensitive device.

Observe precautions for handling.

Description

Process

The 5-GHz power amplifier is designed using Atmel’s Silicon-Germanium (SiGe) pro-

cess and provides excellent noise performance as well as good power-added

efficiency.

Circuitry

The PA consists of a 2-stage amplifier with a maximum output power of 28 dBm. The

output stages were realized using an open-collector structure. The IC features 50-

Ω

input matching. Power-up/down and output level are controlled at bias control pin 6

(V

Figure 1. Block Diagram

Matching

Bias control

RFIN

3

RFOUT

11

6

VCTL

16

VCC_CTL

VCC1

15

VCC2

13

ATR7035

RFOUT

10

5.8-GHz WDCT

Power Amplifier

ATR7035

Summary

Preliminary

Note: This is a summary document. A complete document

is available under NDA. For more information, please con-

tact your local Atmel sales office.

Rev. 4577DS–DECT–11/04