S9012 datasheet(1/1 Pages) SECOS

Part #	S9012

Description	PNP Silicon General Purpose Transistor

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Manufacturer	SECOS [SeCoS Halbleitertechnologie GmbH]

Direct Link	http://www.secosgmbh.com

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S9012

PNP Silicon

General Purpose Transistor

DEVICE MARKING

S9012=2T1

Power dissipation

PCM : 0.3 W

Collector Current

ICM :

- 0.5 A

Collector-base voltage

FEATURES

Collector

3

1

Base

2

Emitter

Dim

Min

Max

A

2.800

3.040

B

1.200

1.400

C

0.890

1.110

D

0.370

0.500

G

1.780

2.040

H

0.013

0.100

J

0.085

0.177

K

0.450

0.600

L

0.890

1.020

S

2.100

2.500

V

0.450

0.600

All Dimension in mm

SOT-23

K

J

C

H

L

A

B S

G

V

3

1

2

D

Top View

http://www.SeCoSGmbH.com

Elektronische Bauelemente

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

Ic=

-100μA， IE=0

-40

V

Collector-emitter breakdown voltage

V(BR)CEO

Ic=

-1mA， IB=0

V

Emitter-base breakdown voltage

V(BR)EBO

IE=

-100μA， IC=0

- 5

V

Collector cut-off current

ICBO

VCB=

- 40V , IE=0

-0.1

μA

Collector cut-off current

ICEO

VCE=

- 20V , IB=0

-0.1

μA

Emitter cut-off current

IEBO

VEB=

- 5V ,

IC=0

-0.1

μA

HFE(1)

VCE=

-1V , IC=-50mA

120

400

DC current gain

HFE(2)

VCE=

-1V , IC=-500mA

40

Collector-emitter saturation voltage

VCE(sat)

IC=

-500mA, IB=- 50mA

-0.6

V

Base-emitter saturation voltage

VBE(sat)

IC=

-500mA, IB=-50mA

-1.2

V

Transition frequency

fT

VCE=

-6V, IC=-20mA

f=30MHz

150

MHz

1

2

ELECTRICAL CHARACTERISTICS ( Tamp.=25OC unless otherwise specified)

V(BR)CBO :

- 40 V

Operating & storage junction temperature

Tj, Tstg : - 55

OC ~ + 150OC

3

1

7-Dec-2007 Rev.B

Page 1 of 1

-25

CLASSIFICATION OF

hFE(1)

Rank

L

H

J

Range

120-200

200-350

300-400

RoHS Compliant Product

A suffix of "-C" specifies halogen & lead-free

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