FS8820 datasheet(4/6 Pages) FORTUNE

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Electrical Characteristics

Electrical Characteristics @Tj = 25℃ ( unless otherwise specified )

Symbol

Parameter

Test Conditions

Min.

Typ. Max. Units

Static Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS = 0V, ID = 250uA

BVDSS/Δ Tj

Breakdown Voltage Temperature Coefficient

Reference to 25℃, ID=1mA

0.1

V/℃

RDS(ON) 1

Static Drain-Source On-Resistance2

VGS = 4.5V, ID = 6A

mΩ

VGS = 2.5V, ID = 5A

mΩ

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250uA

0.5

0.7

1.0

IDSS

Drain-Source Leakage Current (Tj = 25℃)

VDS =16 VGS = 0V

Drain-Source Leakage Current (Tj = 85℃)

VDS =16 VGS = 0V

IGSS

Gate-Source Leakage

VGS = ±10V

Diode Characteristics

VSD 1

Diode Forward Voltage

ISD=1.7A,VGS=0V

0.7

1.0

trr

Reverse Recovery Time

ISD=6A,dISD/dt=100A/μ

Qrr

Reverse Recovery Charge

Dynamic Characteristics 2

Gate Resistance

VGS=VDS=0V,F=1MHz

Ciss

Input Capacitance

VGS=0V,VDS=10V

Frequency=1MHz

1110

Coss

Output Capacitance

240

Crss

Reverse Transfer Capacitance

200

td(on)

Turn-on Delay Time

VDS=10V,VGEN=4.5V,

RG=6Ω ,RL=10Ω ,

IDS=1A

Turn-on Rise Time

td(off)

Turn-off Delay Time

122

Turn-off Rise Time

Gate Charge Characteristics2

Total Gate Charge

VGS=4.5V,VDS=10V,

IDS=6A

Qgs

Gate-Source Charge

1.5

Qgd

Gate-Drain Charge

4.7

Notes：

1. Pulse width ≦ 300us, duty cycle ≦ 2%.

2. Guaranteed by design, not subject to production testing

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