TMUX1102DBVR datasheet(15/31 Pages) TI1

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OUT

Off Isolation

20 Log

GND

NETWORK

ANALYZER

VOUT

VSIG

VDD

0.1µF

VOUT

Output

0 V

VDD

QC = CL ×

VOUT

VSEL

GND

OUTPUT

SEL

VDD

0.1 F

VOUT

VSEL

TMUX1101, TMUX1102

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SCDS410 – MARCH 2019

Product Folder Links: TMUX1101 TMUX1102

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8.5 Charge injection

The TMUX110x devices have a transmission-gate topology. Any mismatch in capacitance between the NMOS

and PMOS transistors results in a charge injected into the drain or source during the falling or rising edge of the

gate signal. The amount of charge injected into the source or drain of the device is known as charge injection,

and is denoted by the symbol QC. Figure 5 shows the setup used to measure charge injection from source (S) to

drain (D).

Figure 5. Charge-injection measurement setup

8.6 Off isolation

Off isolation is defined as the ratio of the signal at the drain pin (D) of the device when a signal is applied to the

source pin (S) of an off-channel. The characteristic impedance, Z0, for the measurement is 50 Ω. Figure 6 shows

the setup used to measure off isolation. Use off isolation equation to compute off isolation.

Figure 6. Off isolation measurement setup

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TMUX1102DBVR Datasheet(PDF) 15 Page - Texas Instruments

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