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P0420HTFB Datasheet(PDF) 2 Page - NIKO SEMICONDUCTOR CO., LTD. |
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P0420HTFB Datasheet(HTML) 2 Page - NIKO SEMICONDUCTOR CO., LTD. |
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2 / 4 page ![]() REV 0.9 2 G-45-5 N-Channel Enhancement Mode Field Effect Transistor P0420HTFB TO-220F Halogen-Free & Lead-Free NIKO-SEM DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 25V, f = 1MHz 176 pF Output Capacitance Coss 40 Reverse Transfer Capacitance Crss 9.4 Total Gate Charge 2 Qg VDS = 160V, VGS = 10V, ID = 4A 6.6 nC Gate-Source Charge 2 Qgs 1.1 Gate-Drain Charge 2 Qgd 2.5 Turn-On Delay Time 2 td(on) VDS = 100V, ID 4A, VGS = 10V 9 nS Rise Time 2 tr 15 Turn-Off Delay Time 2 td(off) 16 Fall Time 2 tf 10 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS 6.5 A Forward Voltage 1 VSD IF = 4A, VGS = 0V 1.5 V Reverse Recovery Time trr IF = 4A, dlF/dt = 100A / S 98 nS Reverse Recovery Charge Qrr 270 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2%. 2Independent of operating temperature. |
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