| Electronic Components Datasheet Search |
|
P1210BDA Datasheet(PDF) 2 Page - NIKO SEMICONDUCTOR CO., LTD. |
|
|
|||||||||||||||||||||||||||||
P1210BDA Datasheet(HTML) 2 Page - NIKO SEMICONDUCTOR CO., LTD. |
|
2 / 4 page ![]() REV 1.0 2 H-7-3 N-Channel Enhancement Mode Field Effect Transistor P1210BDA TO-252 Halogen-Free & Lead-Free NIKO-SEM Forward Transconductance 1 gfs VDS = 5V, ID = 12A 62 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 50V, f = 1MHz 2025 pF Output Capacitance Coss 186 Reverse Transfer Capacitance Crss 10 Total Gate Charge 2 Qg(VGS=10V) VDS = 50V, ID = 12A 31.6 nC Qg(VGS=4.5V) 16 Gate-Source Charge 2 Qgs 5.2 Gate-Drain Charge 2 Qgd 5.5 Turn-On Delay Time 2 td(on) 12 nS Rise Time 2 tr VDD = 50V 10 Turn-Off Delay Time 2 td(off) ID 12A, VGS = 10V, RGS = 6Ω 33 Fall Time 2 tf 11 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS 49 A Forward Voltage 1 VSD IF = 12A, VGS = 0V 1.2 V Reverse Recovery Time trr IF = 12A, dlF/dt = 100A / S 55 nS Reverse Recovery Charge Qrr 62 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2%. 2Independent of operating temperature. |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |