P1603BEX datasheet(2/4 Pages) NIKOSEM

2 / 4 page

REV1.0

E-21-1

N-Channel Enhancement Mode

Field Effect Transistor

P1603BEX

PDFN 2x2S

Halogen-Free & Lead-Free

NIKO-SEM

Gate-Body Leakage

IGSS

VDS = 0V, VGS = ±20V

±100

Zero Gate Voltage Drain Current

IDSS

VDS = 24V, VGS = 0V

A

VDS = 20V, VGS = 0V, TJ = 55 °C

Drain-Source On-State

Resistance

RDS(ON)

VGS = 4.5V, ID = 8A

16.4

mΩ

VGS = 10V, ID = 8A

13.3

Forward Transconductance

gfs

VDS = 10V, ID = 8A

DYNAMIC

Input Capacitance

Ciss

VGS = 0V, VDS = 15V, f = 1MHz

513

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Gate Resistance

VGS = 0V, VDS = 0V, f = 1MHz

2.6

Total Gate Charge

Qg(VGS=10V)

VDS = 15V , ID = 8A

Qg(VGS=4.5V)

7.2

Gate-Source Charge

Qgs

1.2

Gate-Drain Charge

Qgd

Turn-On Delay Time

td(on)

VDD = 15V

ID  8A, VGEN = 10V, RG = 6Ω

Rise Time

Turn-Off Delay Time

td(off)

Fall Time

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)

Continuous Current

Forward Voltage

VSD

IF = 8A, VGS = 0V

0.8

Reverse Recovery Time

trr

IF = 8A , dlF/dt = 100A / S

11.3

Reverse Recovery Charge

Qrr

2.5

1Pulse test : Pulse Width

 300 sec, Duty Cycle  2％.

2Independent of operating temperature.

3Package limitation current is 18A.

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