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P5506BDA Datasheet(PDF) 2 Page - NIKO SEMICONDUCTOR CO., LTD.

Part # P5506BDA
Description  N-Channel Enhancement Mode Field Effect Transistor
PDF  4 Pages
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Manufacturer  NIKOSEM [NIKO SEMICONDUCTOR CO., LTD.]
Direct Link  http://www.niko-sem.com
Logo NIKOSEM - NIKO SEMICONDUCTOR CO., LTD.

P5506BDA Datasheet(HTML) 2 Page - NIKO SEMICONDUCTOR CO., LTD.

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REV1.0
2
H-24-5
N-Channel Enhancement Mode
Field Effect Transistor
P5506BDA
TO-252
Halogen-Free & Lead-Free
NIKO-SEM
Drain-Source On-State
Resistance
1
RDS(ON)
VGS = 4.5V, ID = 8A
49
72
mΩ
VGS = 10V, ID = 10A
43
55
Forward Transconductance
1
gfs
VDS = 5V, ID = 10A
20
S
DYNAMIC
Input Capacitance
Ciss
VGS = 0V, VDS = 25V, f = 1MHz
376
pF
Output Capacitance
Coss
54
Reverse Transfer Capacitance
Crss
37
Gate Resistance
Rg
VGS = 0V, VDS = 0V, f = 1MHz
1.6
Ω
Total Gate Charge
2
Qg
VGS = 10V
VDS = 30V , VGS = 10V , ID = 10A
10
nC
VGS = 4.5V
6
Gate-Source Charge
2
Qgs
1.2
Gate-Drain Charge
2
Qgd
3.9
Turn-On Delay Time
2
td(on)
VDS = 30V
ID  10A, VGS = 10V, RGEN =6Ω
9.5
nS
Rise Time
2
tr
36
Turn-Off Delay Time
2
td(off)
21
Fall Time
2
tf
60
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
15
A
Forward Voltage
1
VSD
IF = 10A, VGS = 0V
1.2
V
Reverse Recovery Time
trr
IF = 10A, dlF/dt = 100A / S
18
nS
Reverse Recovery Charge
Qrr
7
nC
1Pulse test : Pulse Width
 300 sec, Duty Cycle  2％.
2Independent of operating temperature.



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