P9006EVA datasheet(2/4 Pages) NIKOSEM

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P-Channel Logic Level Enhancement Mode

Field Effect Transistor

REV 1.0

I-37-2

P9006EVA

SOP-8

Halogen-free & Lead-Free

NIKO-SEM

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS

UNIT

MIN

TYP MAX

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = -250A

-60

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = -250A

-1.3

-1.8

-2.3

Gate-Body Leakage

IGSS

VDS = 0V, VGS = ±25V

±100

Zero Gate Voltage Drain Current

IDSS

VDS = -48V, VGS = 0V

-1

A

VDS = -40V, VGS = 0V, TJ = 55 °C

-10

Drain-Source On-State Resistance

RDS(ON)

VGS = -10V, ID = -3.6A

mΩ

VGS = -4.5V, ID = -3.6A

111

135

Forward Transconductance

gfs

VDS = -5V, ID = -3.6A

DYNAMIC

Input Capacitance

Ciss

VGS = 0V, VDS = -25V, f = 1MHz

539

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Gate Resistance

VGS = 0V, VDS = 0V, f = 1MHz

9.1

Total Gate Charge

Qg(VGS=-10V)

VDS = -30V , ID = -3.6A

11.6

Qg(VGS=-4.5V)

6.3

Gate-Source Charge

Qgs

1.5

Gate-Drain Charge

Qgd

3.4

Turn-On Delay Time

td(on)

VDD = -30V, ID  -3.6A ,

VGS = -10V, RGEN = 6Ω

Rise Time

Turn-Off Delay Time

td(off)

Fall Time

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)

Continuous Current

-2.4

Forward Voltage

VSD

IF = -3.6A, VGS = 0V

-1

Reverse Recovery Time

trr

IF=-3.6A, dI/dt=100A/μs

Reverse Recovery Charge

Qrr

1Pulse test : Pulse Width

 300 sec, Duty Cycle  2%.

2Independent of operating temperature.

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