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BUJ303A Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BUJ303A Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Power Transistor BUJ303A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA; IB= 0 500 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.6A 1.3 V ICBO Collector Cutoff Current VCB=1000V ;VBE= 0 VCB=1000V ;VBE= 0;TC=125℃ 1 2 mA IEBO Emitter Cutoff Current VEB= 9V; IC= 0 0.1 mA ICEO Base Cutoff Current VCE= 500V; IC= 0 0.1 mA hFE-1 DC Current Gain IC= 5mA ; VCE= 5V 10 35 hFE-2 DC Current Gain IC= 0.5A ; VCE= 5V 14 35 Switching Times ;Resistive Load ton Turn-on Time IC= 2.5A; IB1= -IB2= 0.5A; RL= 75Ω; VBB2= 4V 0.7 µs tS Storage Time 4 tf Fall Time 0.45 Switching Times ;Resistive Load tS Storage Time IC= 2.5A; IB1= -IB2= 0.5A; LB=1uH; -VBB2= 5V 1.6 µs tf Fall Time 160 ns Switching Times ;Resistive Load tS Storage Time IC= 2.5A; IB1= -IB2= 0.5A; LB=1uH; -VBB2= 5V; Tj=100℃ 1.9 µs tf Fall Time 200 ns |
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