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PC506BA Datasheet(PDF) 4 Page - NIKO SEMICONDUCTOR CO., LTD. |
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PC506BA Datasheet(HTML) 4 Page - NIKO SEMICONDUCTOR CO., LTD. |
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4 / 4 page ![]() REV1.0 4 G-14-2 NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor PC506BA SOT-89 Halogen-Free & Lead-Free 25℃ 150℃ 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 On-Resistance VS Temperature TJ , Junction Temperature( ˚C) Source-Drain Diode Forward Voltage Safe Operating Area Single Pulse Maximum Power Dissipation Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve T1 , Square Wave Pulse Duration[sec] VSD, Source-To-Drain Voltage(V) 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=3A 0 2 4 6 8 10 12 14 16 18 20 0.001 0.01 0.1 1 10 100 Single Pulse R θJA = 64˚C/W TA=25 ˚C DC 100ms 10ms 1ms 0.01 0.1 1 10 100 0.01 0.1 1 10 100 NOTE : 1.VGS= 10V 2.TA=25 ˚C 3.R θJA = 64˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) ↓ single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 64 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA |
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