PD515BA datasheet(2/4 Pages) NIKOSEM

2 / 4 page

REV 0.9

F-20-2

P-Channel Enhancement Mode

Field Effect Transistor

PD515BA

TO-252

Halogen-Free & Lead-Free

NIKO-SEM

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS

UNIT

MIN

TYP MAX

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = -250A

-20

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = -250A

-0.3

-0.7

-1

Gate-Body Leakage

IGSS

VDS = 0V, VGS = ±8V

±100

Zero Gate Voltage Drain Current

IDSS

VDS = -16V, VGS = 0V

-1

A

VDS = -10V, VGS = 0V, TJ = 125 °C

-10

Drain-Source On-State

Resistance

RDS(ON)

VGS = -4.5V, ID = -2.5A

mΩ

VGS = -2.5V, ID = -2A

VGS = -1.8V, ID = -1A

120

Forward Transconductance

gfs

VDS = -5V, ID = -2.5A

DYNAMIC

Input Capacitance

Ciss

VGS = 0V, VDS = -10V, f = 1MHz

576

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Gate Resistance

VGS =0V, VDS = 0V, f = 1MHz

Total Gate Charge

Qg (VGS=-4.5V)

VDS = -10V , ID = -2.5A

6.7

Qg(VGS=-2.5V)

Gate-Source Charge

Qgs

0.8

Gate-Drain Charge

Qgd

1.8

Turn-On Delay Time

td(on)

VDS = -10V ,ID  -2.5A,

VGS = -4.5V, RGEN =6Ω

Rise Time

Turn-Off Delay Time

td(off)

Fall Time

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)

Continuous Current

-20

Forward Voltage

VSD

IF = -2.5A, VGS = 0V

-1.2

Reverse Recovery Time

trr

IF = -2.5A, dlF/dt = 100A / S

Reverse Recovery Charge

Qrr

1Pulse test : Pulse Width

 300 sec, Duty Cycle  2%.

2Independent of operating temperature.

3Package limitation current is -10A.

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