PE552BA datasheet(2/4 Pages) NIKOSEM

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REV 1.0

F-43-3

N-Channel Enhancement Mode

Field Effect Transistor

PE552BA

PDFN 3x3P

Halogen-Free & Lead-Free

NIKO-SEM

Gate-Body Leakage

IGSS

VDS = 0V, VGS = ±8V

±100

Zero Gate Voltage Drain Current

IDSS

VDS = 16V, VGS = 0V

A

VDS = 10V, VGS = 0V, TJ = 55 °C

Drain-Source On-State

Resistance

RDS(ON)

VGS = 4.5V, ID = 5A

4.1

mΩ

VGS = 2.5V, ID = 5A

4.7

5.7

VGS = 1.8V, ID = 5A

8.2

Forward Transconductance

gfs

VDS = 5V, ID = 5A

DYNAMIC

Input Capacitance

Ciss

VGS = 0V, VDS = 10V, f = 1MHz

4407

Output Capacitance

Coss

469

Reverse Transfer Capacitance

Crss

381

Gate Resistance

VGS = 0V, VDS = 0V, f = 1MHz

0.7

Total Gate Charge

VGS=4.5V , VDS = 10V , ID = 5A

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Turn-On Delay Time

td(on)

VDD = 4.5V

ID  5A, VGEN = 10V, RG =6Ω

Rise Time

Turn-Off Delay Time

td(off)

180

Fall Time

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)

Continuous Current

Forward Voltage

VSD

IF = 5A, VGS = 0V

1.3

Reverse Recovery Time

trr

IF = 5A , dlF/dt = 100A / S

Reverse Recovery Charge

Qrr

1Pulse test : Pulse Width  300 sec, Duty Cycle  2％.

2Independent of operating temperature.

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