PE600SA datasheet(1/4 Pages) NIKOSEM

Part #	PE600SA

Description	N-Channel Enhancement Mode Field Effect Transistor

PDF	4 Pages

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Manufacturer	NIKOSEM [NIKO SEMICONDUCTOR CO., LTD.]

Direct Link	http://www.niko-sem.com

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1 / 4 page

REV1.0

1

E-43-1

N-Channel Enhancement Mode

Field Effect Transistor

PE600SA

PDFN 3x3P

Halogen-Free & Lead-Free

NIKO-SEM

PRODUCT SUMMARY

V(BR)DSS

RDS(ON)

ID

30V

12mΩ

30A

G

S

#1

D

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

UNITS

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

±20

V

Continuous Drain Current

3

TC = 25 °C

ID

30

A

TC = 100 °C

19

TA = 25 °C

11

TA = 70 °C

9.3

Pulsed Drain Current

1

IDM

80

Avalanche Current

IAS

21

Avalanche Energy

L = 0.1mH

EAS

22

mJ

Power Dissipation

4

TC = 25 °C

PD

20

W

TC = 100 °C

8.3

TA = 25 °C

3.1

TA = 70 °C

2

Operating Junction & Storage Temperature Range

Tj, Tstg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

UNITS

Junction-to-Ambient

2

t≦10s

RJA

40

°C / W

Steady-State

RJA

69

Junction-to-Case

Steady-State

RJC

6

1Pulse width limited by maximum junction temperature.

2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air

environment with TA =25°C.

3Package limitation current is 16A

4The Power dissipation is based on R

JA t ≦10s value.

G : GATE

D : DRAIN

S : SOURCE

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PE600SA Datasheet(PDF) 1 Page - NIKO SEMICONDUCTOR CO., LTD.

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