PE606BA datasheet(1/4 Pages) NIKOSEM

Part #	PE606BA

Description	N-Channel Enhancement Mode Field Effect Transistor

PDF	4 Pages

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Manufacturer	NIKOSEM [NIKO SEMICONDUCTOR CO., LTD.]

Direct Link	http://www.niko-sem.com

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REV 1.2

1

E-29-1

N-Channel Enhancement Mode

Field Effect Transistor

PE606BA

PDFN 3x3P

Halogen-Free & Lead-Free

NIKO-SEM

PRODUCT SUMMARY

V(BR)DSS

RDS(ON)

ID

3

30V

18mΩ

23A

G

D

S

G

S

#1

DD D D

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

UNITS

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

±20

V

Continuous Drain Current

3

TC = 25 °C

ID

23

A

TC = 100 °C

15

Continuous Drain Current

3

TA = 25 °C

10.6

TA = 70 °C

8.5

Pulsed Drain Current

1

IDM

60

Avalanche Current

IAS

12.6

Avalanche Energy

L = 0.1mH

EAS

7.9

mJ

Power Dissipation

TC = 25 °C

PD

17

W

TC = 100 °C

7

Power Dissipation

4

TA = 25 °C

3.5

TA = 70 °C

2.2

Operating Junction & Storage Temperature Range

Tj, Tstg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

UNITS

Junction-to-Ambient

2

t ≦10s

RJA

35

°C / W

Junction-to-Ambient

2

Steady-State

RJA

70

Junction-to-Case

Steady-State

RJC

7

1Pulse width limited by maximum junction temperature.

2The value of R

θJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air

environment with TA =25°C.

3Package limitation current is 11A

4The Power dissipation is based on RJA t ≦10s value.

G : GATE

D : DRAIN

S : SOURCE

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PE606BA Datasheet(PDF) 1 Page - NIKO SEMICONDUCTOR CO., LTD.

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