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PI506BZ Datasheet(PDF) 2 Page - NIKO SEMICONDUCTOR CO., LTD. |
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PI506BZ Datasheet(HTML) 2 Page - NIKO SEMICONDUCTOR CO., LTD. |
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2 / 4 page ![]() REV 0.9 2 C-49-5 N-Channel Enhancement Mode Field Effect Transistor PI506BZ TO-251(IS) Halogen-Free & Lead-Free NIKO-SEM Forward Transconductance 1 gfs VDS = 10V, ID = 20A 80 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 15V, f = 1MHz 1800 pF Output Capacitance Coss 270 Reverse Transfer Capacitance Crss 226 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 0.9 Ω Total Gate Charge 2 Qg VGS=10V VDS = 15V, ID = 20A 43.3 nC VGS=4.5V 22.9 Gate-Source Charge 2 Qgs 6.2 Gate-Drain Charge 2 Qgd 11.3 Turn-On Delay Time 2 td(on) VDS = 15V ID 20A, VGS = 10V, RGEN =6Ω 25 nS Rise Time 2 tr 24 Turn-Off Delay Time 2 td(off) 99 Fall Time 2 tf 57 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current 3 IS 68 A Forward Voltage 1 VSD IF = 20A, VGS = 0V 1.2 V Reverse Recovery Time trr IF = 20A, dlF/dt = 100A / S 21 nS Reverse Recovery Charge Qrr 12 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2%. 2Independent of operating temperature. 3Package limitation current is 40A. |
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