PK616BA datasheet(2/4 Pages) NIKOSEM

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REV1.1

E-29-2

N-Channel Enhancement Mode

Field Effect Transistor

PK616BA

PDFN 5x6P

Halogen-Free & Lead-Free

NIKO-SEM

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS

UNIT

MIN

TYP

MAX

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = 250A

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250A

1.35

1.7

Gate-Body Leakage

IGSS

VDS = 0V, VGS = ±20V

±100

Zero Gate Voltage Drain Current

IDSS

VDS = 24V, VGS = 0V

A

VDS = 20V, VGS = 0V, TJ = 55 °C

Drain-Source On-State

Resistance

RDS(ON)

VGS = 4.5V, ID = 13A

6.3

9.5

mΩ

VGS = 10V, ID = 13A

4.8

Forward Transconductance

gfs

VDS = 5V, ID = 13A

DYNAMIC

Input Capacitance

Ciss

VGS = 0V, VDS = 15V, f = 1MHz

847

Output Capacitance

Coss

163

Reverse Transfer Capacitance

Crss

Gate Resistance

VGS = 0V, VDS = 0V, f = 1MHz

2.3

Total Gate Charge

VGS = 10V

VDS = 15V , VGS = 10V,

ID = 13A

17.5

VGS = 4.5V

9.3

Gate-Source Charge

Qgs

2.1

Gate-Drain Charge

Qgd

5.4

Turn-On Delay Time

td(on)

VDS = 15V ,

ID  13A, VGS = 10V, RGEN =6Ω

Rise Time

Turn-Off Delay Time

td(off)

Fall Time

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)

Continuous Current

25.8

Forward Voltage

VSD

IF = 13A, VGS = 0V

1.2

Reverse Recovery Time

trr

IF = 13A, dlF/dt = 100A / S

10.8

Reverse Recovery Charge

Qrr

2.3

1Pulse test : Pulse Width

 300 sec, Duty Cycle  2％.

2Independent of operating temperature.

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