PK618BA datasheet(1/4 Pages) NIKOSEM

Part #	PK618BA

Description	N-Channel Enhancement Mode Field Effect Transistor

PDF	4 Pages

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Manufacturer	NIKOSEM [NIKO SEMICONDUCTOR CO., LTD.]

Direct Link	http://www.niko-sem.com

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1 / 4 page

PK618BA

PDFN 5x6P

Halogen-Free & Lead-Free

REV 1.1

1

D-51-1

N-Channel Enhancement Mode

Field Effect Transistor

NIKO-SEM

G

D

S

#1

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

UNITS

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

±20

V

Continuous Drain Current

3

TC = 25 °C

ID

59

A

TC = 100 °C

37

Pulsed Drain Current

1

IDM

150

Continuous Drain Current

TA = 25 °C

ID

15

TA = 70 °C

12

Avalanche Current

IAS

31

Avalanche Energy

L = 0.1mH

EAS

48

mJ

Power Dissipation

TC = 25 °C

PD

34

W

TC = 100 °C

13

Power Dissipation

TA = 25 °C

PD

2.5

W

TA = 70 °C

1.6

Operating Junction & Storage Temperature Range

Tj, Tstg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

UNITS

Junction-to-Ambient

2

RJA

50

°C / W

Junction-to-Case

RJC

3.6

1Pulse width limited by maximum junction temperature.

2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air

environment with TA =25°C.

3Package limitation current is 26A.

G. GATE

D. DRAIN

S. SOURCE

PRODUCT SUMMARY

V(BR)DSS

RDS(ON)

ID

30V

5.5mΩ

59A

G

D

S

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PK618BA Datasheet(PDF) 1 Page - NIKO SEMICONDUCTOR CO., LTD.

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