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ISCN52E Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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ISCN52E Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Power Transistor ISCN52E ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 2.0A; IB= 0.2A 0.3 0.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 2.0A; IB= 0.2A 1.0 2.0 V ICBO Collector Cutoff Current VCB= 60V; IE= 0 1.0 μ A IEBO Emitter Cutoff Current VEB= 3V; IC= 0 1.0 μ A hFE-1 DC Current Gain IC= 20mA ; VCE= 2V 30 hFE-2 DC Current Gain IC= 1A ; VCE= 2V 100 200 fT Current-Gain—Bandwidth Product IC= 0.1A ; VCE= 5V 90 MHz COB Output Capacitance IE= 0 ; VCB= 10V,ftest= 1MHz 45 pF |
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