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ISCPD44D Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # ISCPD44D
Description  isc Silicon PNP Darlington Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

ISCPD44D Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon PNP Darlington Power Transistor
ISCPD44D
DESCRIPTION
·
High DC Current Gain-
: hFE = 1000(Min)@ IC= -4A
·
Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -100V(Min)
·
Low Collector-Emitter Saturation Voltage-
: VCE(sat) = -2.0V(Max)@ IC= -4A
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Designed for general-purpose amplifier and low-speed
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-100
V
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-8
A
ICM
Collector Current-Peak
-12
A
IB
Base Current- Continuous
-0.3
A
PC
Collector Power Dissipation
@TC=25℃
30
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
2.5
℃
/W
Rth j-a
Thermal Resistance,Junction to Ambient
63.5
℃
/W


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