PKCS0BB datasheet(2/6 Pages) NIKOSEM

2 / 6 page

REV 1.0

I-50-1

N-Channel Enhancement Mode

Field Effect Transistor

PKCS0BB

PDFN 5x6P

Halogen-Free & Lead-Free

NIKO-SEM

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

UNITS

Junction-to-Ambient

t ≦10s

RJA

°C / W

Junction-to-Ambient

Steady-State

RJA

Junction-to-Case

Steady-State

RJC

2.3

1Pulse width limited by maximum junction temperature.

2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air

environment with TA =25°C.

3The Power dissipation is based on R

JA t ≦10s value.

4The maximum current rating is package limited.

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS

UNIT

MIN

TYP

MAX

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = 250A

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250A

1.3

1.8

2.3

Gate-Body Leakage

IGSS

VDS = 0V, VGS = ±20V

±100

Zero Gate Voltage Drain Current

IDSS

VDS = 32V, VGS = 0V

A

VDS = 30V, VGS = 0V, TJ = 55 °C

Drain-Source On-State

Resistance

RDS(ON)

VGS = 4.5V, ID = 16A

1.5

2.1

mΩ

VGS = 10V, ID = 20A

1.1

1.5

Forward Transconductance

gfs

VDS = 5V, ID = 20A

DYNAMIC

Input Capacitance

Ciss

VGS = 0V, VDS = 20V, f = 1MHz

6072

Output Capacitance

Coss

694

Reverse Transfer Capacitance

Crss

377

Gate Resistance

VGS = 0V, VDS = 0V, f = 1MHz

1.6

Total Gate Charge

VGS = 10V

VDS = 20V , VGS = 10V,

ID = 20A

109

VGS = 4.5V

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Turn-On Delay Time

td(on)

VDS = 20V ,

ID  20A, VGS = 10V, RGEN =6Ω

Rise Time

Turn-Off Delay Time

td(off)

167

Fall Time

119

PKCS0BB Datasheet(PDF) 2 Page - NIKO SEMICONDUCTOR CO., LTD.

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