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CLC503 Datasheet(PDF) 2 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Part # CLC503
Description  Comlinear CLC503 180MHz, Differential-Output Amplifier
PDF  6 Pages
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Manufacturer  NSC [National Semiconductor (TI)]
Direct Link  http://www.national.com
Logo NSC - National Semiconductor (TI)

CLC503 Datasheet(HTML) 2 Page - National Semiconductor (TI)

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PARAMETERS
CONDITIONS
TYP
MIN/MAX RATINGS
UNITS
NOTES
Ambient Temperature
CLC503
+25˚C
+25˚C
-40 to 85˚C
FREQUENCY DOMAIN RESPONSE
Differential Amp
large signal bandwidth
Vo < 4.0Vpp
180
80
70
MHz
gain flatness
DC to 10MHz
0.3
0.5
0.5
dB
Common-Mode Amp
-3dB bandwidth
Vo < 4.0Vpp
15
10
10
MHz
TIME DOMAIN RESPONSE
Differential Amp
rise and fall time
2V step
2.1
2.5
3.0
ns
settling time to 0.1%
2V step
15
22
25
ns
overshoot
2V step
0
%
slew rate
2V step
800
500
500
V/
µs
Common-Mode Amp
recovery from power down
0.1% output settling
40
100
100
ns
DISTORTION AND NOISE RESPONSE
2nd harmonic distortion
4Vpp, 1MHz
-78
-74
-70
dBc
B
4Vpp, 10MHz
-75
-71
-71
dBc
B
3rd harmonic distortion
4Vpp, 1MHz
-85
-80
-79
dBc
B
4Vpp, 10MHz
-77
-72
-72
dBc
B
SNR
4Vpp
72
71
70
dB
integrated output noise voltage
Rs = 50Ω
10kHz – 500MHz
325
380
460
µV
rms
STATIC DC PERFORMANCE
Differential Amp
gain
Vo(Diff)/Vin
2
1.75 - 2.25
1.75 - 2.25
V/V
A
output offset voltage
Vin = 0
10
90
100
mV
A
INL
0.015
0.03
0.05
%
A
Rin
2
1.6 - 2.4
1.6 - 2.4
k
Common-Mode Amp
gain
Vocm/Vcm
0.97
0.9 - 1.1
0.9 - 1.1
V/V
output offset voltage
100
200
200
mV
A
Rin
10
5
5
M
input voltage range
1.5 - 3.5
V
power supply rejection ratio
DC
50
30
30
dB
A
supply current
RL= ∞
25
30
30
mA
A
supply current, power down
4.5
6
6
mA
A
MISCELLANEOUS PERFORMANCE
power down input
CMOS levels
0.5 - 4.8
V
C
VIL
on
1
V
VIH
off
4.5
V
C
power down dissipation
PDN = “Hi”
45
60
60
mW
A
output voltage range
single output
0.7 - 3.9
0.85 - 3.7
0.9 - 3.5
V
differential output resistance
500
400 - 600
375 - 625
Min/max ratings are based on product characterization and simulation. Individual parameters are tested as noted. Outgoing quality levels are
determined from tested parameters.
Electrical Characteristics (V
CC = + 5V, VEE = - 5V, Vcm = 2.25V, CL = 5pF, Vo = 4Vpp unless specified)
Notes
A) J-level: spec is 100% tested at +25˚C, sample tested at +85˚C.
LC/MC-level: spec is 100% wafer probed at +25˚C.
B) J-level: spec is sample tested at +25˚C.
C) POWER DOWN must be 1V higher than Vcm.
Ordering Information
Model
Temperature Range
Description
CLC503AJE
-40˚C to +85˚C
8-pin SOIC
Absolute Maximum Ratings
supply voltage
±6V
maximum input range
±6V
maximum output range (±V)
0 to VCC
maximum operating temperature range
-40˚C to +85˚C
maximum junction temperature
+175˚C
maximum storage temperature range
-65˚C to +150˚C
maximum lead temperature (soldering 10 sec)
+300˚C
ESD rating (human body model)
500V
Recommended Operating Conditions
supply voltage
±4.5 to ±5.5Vdc
input voltage
±1V
output voltage
+0.8 to +3.75V
ambient temperature range
-40°C to +85°C
Package Thermal Resistance
Package
q
JC
q
JA
SOIC (AJE)
65˚C/W
90˚C/W
http://www.national.com
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