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FFM107AFG Datasheet(PDF) 1 Page - Shenzhen Foster Semiconductor Co., Ltd. |
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FFM107AFG Datasheet(HTML) 1 Page - Shenzhen Foster Semiconductor Co., Ltd. |
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1 / 3 page  SMAF 1. Cathode 2. Anode 2 1 2 Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. Low profile surface mounted application in order to optimize board space. High current capability. High surge current capability. Glass passivated chip junction. • Fast switching for high efficiency. Lead-free parts meet RoHS requirments. • • • • • • Maximum ratings (AT T =25 A oC unless otherwise noted) PARAMETER CONDITIONS Forward rectified current Forward surge current Reverse current Thermal resistance Diode junction capacitance Storage temperature Ambient temperature = 75 C o 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) f=1MHz and applied 4V DC reverse voltage Symbol MIN. TYP. MAX. UNIT I O I FSM I R R θ JA C J T STG A A μA OC/W OC pF 1.0 30 5.0 +150 -55 80 V = V T = 25 C R RRM J O V = V T = 100 C R RRM J O Junction to ambient 15 50 FFM101AFG FFM102AFG FFM103AFG 50 100 200 35 70 140 SYMBOLS V RRM (V) V RMS V R (V) (V) *1 *2 *3 *1 Repetitive peak reverse voltage *2 RMS voltage *3 Continuous reverse voltage *4 Maximum forward voltage@I =1.0A F *5 Maximum Reverse recovery time, note 1 V F (V) *4 FFM104AFG FFM105AFG 400 600 280 420 1.30 -55 to +150 FFM106AFG FFM107AFG 800 1000 560 700 T RR (nS) *5 150 250 500 50 100 200 400 600 800 1000 (C) O Operating temperature T, J Note 1. Reverse recovery time test condition, I =0.5A, I =1.0A, I =0.25A FRRR FFM101AFG THRU FFM107AFG Chip Silicon Rectifier 1.0A Surface Mount Fast Recovery Rectifiers-50-1000V Features @ 2018 Copyright By American First Semiconductor REV:1.0 Page 1/3 |
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