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SIF110N080 Datasheet(PDF) 2 Page - Shenzhen SI Semiconductors Co.,LTD.

Part # SIF110N080
Description  N-CHANNEL POWER MOSFET
PDF  5 Pages
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Manufacturer  SISEMIC [Shenzhen SI Semiconductors Co.,LTD.]
Direct Link  http://www.sisemi.com.cn/en_index.aspx
Logo SISEMIC - Shenzhen SI Semiconductors Co.,LTD.

SIF110N080 Datasheet(HTML) 2 Page - Shenzhen SI Semiconductors Co.,LTD.

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深圳深爱半导体股份有限公司
产品规格书
Shenzhen
Shenzhen
Shenzhen
Shenzhen SI
SI
SI
SI Semiconductors
Semiconductors
Semiconductors
Semiconductors Co.,
Co.,
Co.,
Co., LTD.
LTD.
LTD.
LTD.
Product
Product
Product
Product Specification
Specification
Specification
Specification
Si
Si
Si
Si semiconductors
semiconductors
semiconductors
semiconductors
2015.11
2015.11
2015.11
2015.11
2
N-
N-
N-
N-沟道功率 MOS
MOS
MOS
MOS 管//// N-C
N-C
N-C
N-CHANNEL
HANNEL
HANNEL
HANNEL POWER
POWER
POWER
POWER MOSFET
MOSFET
MOSFET
MOSFET
SIF
SIF
SIF
SIF110N080
110N080
110N080
110N080
参数
PARAMETER
PARAMETER
PARAMETER
PARAMETER
符号
SYMBOL
SYMBOL
SYMBOL
SYMBOL
测试条件
TEST
TEST
TEST
TEST CONDITION
CONDITION
CONDITION
CONDITION
最小值
MIN
MIN
MIN
MIN
典型值
TYP
TYP
TYP
TYP
最大值
MAX
MAX
MAX
MAX
单位
UNIT
UNIT
UNIT
UNIT
输入电容
Input Capacitance
Ciss
VGS = 0V, VDS = 25V
F = 1.0MHZ
3150
pF
输出电容
Output Capacitance
Coss
450
反向传输电容
Reverse Transfer Capacitance
Crss
220
导通延迟
Turn -On Delay Time
Td(on)
VDD=38V, ID
=10A,RL=3.8Ω
VGS = 10V, RG=1Ω
20
ns
开启上升时间
Turn -On Rise Time
Tr
35
关断延迟
Turn -Off Delay Time
Td(off)
55
关断下降时间
Turn -Off Fall Time
Tf
22
栅极电荷
Total Gate Charge
Qg
ID =80A, VDS = 60V
VGS = 10V
80
nC
栅源电荷
Gate-to-Source Charge
Qgs
17
nC
栅漏电荷
Gate-to-Drain Charge
Qgd
31
nC
二极管正向压降
Diode Forward Voltage
VSD
Tj=25°C, Is=30A
VGS =0V
③
③
③
③
1.35
V
反向恢复时间
Reverse Recovery Time
trr
Tj=25°C,Is=10A
di/dt=100A/μs
③
③
③
③
37
ns
反向恢复电荷
Reverse Recovery Charge
Qrr
58
nC
●热特性
●
●
●
●Thermal
Thermal
Thermal
Thermal Characteristics
Characteristics
Characteristics
Characteristics
参数
PARAMETER
PARAMETER
PARAMETER
PARAMETER
符号
SYMBOL
SYMBOL
SYMBOL
SYMBOL
最大值
MAX
MAX
MAX
MAX
单位
UNIT
UNIT
UNIT
UNIT
TO-220
TO-220
TO-220
TO-220
TO-220FP
TO-220FP
TO-220FP
TO-220FP
热阻结-壳
Thermal Resistance Junction-case
RthJC
0.89
3.13
℃/W
热阻结-环境
Thermal Resistance Junction-ambient
RthJA
62.5
62.5
℃/W
注释((((Notes
Notes
Notes
Notes))))::::
①
①
①
①
以最高结温为限制，基于 TO-220 封装形式，25℃下本产品硅限电流 ID 为 110A，封装限制电流 80A。
ID & PD base on maximum allowable junction temperature, calculated upon TO-220 package type is limited to carry
80A at 25℃.
②
②
②
②
初始结温=25oC, VDD =40V, VG=10V, L=0.5mH, RG =25Ω 。
Starting Tj=25oC, VDD =40V, VG=10V, L=0.5mH, RG =25Ω.
③
③
③
③
脉冲测试：脉冲宽度≤ 300μs ，占空比≤ 2%
Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%



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